In-Built N+ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Micromachines
سال: 2020
ISSN: 2072-666X
DOI: 10.3390/mi11110960